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RF3021 数据表(PDF) 1 Page - RF Micro Devices |
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RF3021 数据表(HTML) 1 Page - RF Micro Devices |
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1 / 6 page ![]() Features 1 of 6 Optimum Technology Matching® Applied GaAs HBT InGaP HBT GaAs MESFET SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Product Description 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. InP HBT LDMOS RF MEMS RF3021 SPDT, HIGH ISOLATION, SINGLE BIT CONTROL, SWITCH The RF3021 is a high isolation single-pole double-throw (SPDT) switch designed for general purpose switching applications requiring moderate insertion loss and power handling capability. It features single-bit control with operation as low as 3V. This GaAs pHEMT switch is housed in a com- pact 3mm, 16-pin, leadless QFN package. 10MHz to 6GHz Operation 0.5dB Insertion Loss at 1GHz 0.9dB Insertion Loss at 6GHz 68dB Isolation at 1GHz 40dBm Isolation at 6GHz 3V Minimum Voltage 50dBm IP3 at 5V Applications Cellular Handset Applications Antenna Tuning Applications IEEE802.11b/g WLAN Applications Cellular Infrastructure Applications DS091125 Package: QFN, 16-Pin, 3mmx3mm RF3021SPDT, High Isolation, Single Bit Con- trol, Switch Parameter Specification Unit Condition Min. Typ. Max. Insertion Loss 0.5 dB Freq=10MHz to 1.0GHz 0.55 0.8 dB Freq=1.0GHz to 2.0GHz 0.6 dB Freq=2.0GHz to 3.0GHz 0.7 dB Freq=3.0GHz to 5.0GHz 0.9 dB Freq=5.0GHz to 6.0GHz Return Loss 18 dB Freq=10MHz to 1.0GHz 18 dB Freq=1.0GHz to 3.0GHz 14 dB Freq=3.0GHz to 6.0GHz Isolation 68 dB Freq=0.5GHz to 1.0GHz 53 58 dB Freq=1.0GHz to 2.0GHz 50 dB Freq=2.0GHz to 3.0GHz 43 dB Freq=3.0GHz to 5.0GHz 40 dB Freq=5.0GHz to 6.0GHz P0.1dB 30 dBm Freq=1.8GHz IP3 50 dBm Freq=0.5GHz to 2.5GHz, 1MHz spacing, 10 dBm/tone IDD, Supply Current 200 300 uA IC, Control Current 20 uA TON, TOFF 35 nS 50% of VCTRL to 10/90% of RF TRISE, TFALL 120 10/90% RF Test Conditions: VDD=5V, 25°C, 50, with application circuit with 100 pF DC blocking capacitors |
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