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BAV20WS 数据表(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

部件名 BAV20WS
功能描述  410mW High Voltage SMD Switching Diode
PDF  3 Pages
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制造商  TSC [Taiwan Semiconductor Company, Ltd]
网页  http://www.taiwansemi.com
标志 TSC - Taiwan Semiconductor Company, Ltd

BAV20WS 数据表(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

  BAV20WS Datasheet HTML 1Page - Taiwan Semiconductor Company, Ltd BAV20WS Datasheet HTML 2Page - Taiwan Semiconductor Company, Ltd BAV20WS Datasheet HTML 3Page - Taiwan Semiconductor Company, Ltd  
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BAV19WS/BAV20WS/BAV21WS
410mW High Voltage SMD Switching Diode
Small Signal Diode
Electrical Characteristics
IF=
100mA
IF=
Junction Capacitance
Tape & Reel specification
Carrier depth
Sprocket hole
Reel outside diameter
Reel inner diameter
Feed hole width
Sprocke hole position
Punch hole position
Sprocke hole pitch
Embossment center
Overall tape thickness
Note 2: Test Condition : IR=100μA
Note 3: Test Condition : BAV19WS @ VR=100V, BAV20WS @ VR=150V, BAV21WS @ VR=200V
Note 4: Test Condition : IF=IR=30mA, RL=100Ω, IRR=3mA
Note 5: A0, B0, and K0 are determined by component size. The clearance between the components and the cavity must be
within 0.05 mm min. to 0.5 mm max. The component cannot rote more than 10° within the determined cavity.
Note 6: If B1 exceeds 4.2 mm(0.165'') for 8 mm embossed tape, the tape may not feed through all tape feeders.
W
8.30 Max.
Reel width
W1
14.4 Max
P0
4.00 ±0.10
P1
2.00 ±0.10
Tape width
T
0.6 Max.
13.0 ± 0.5
K
D2
D1
D
E
1.75 ±0.10
50 Min.
F
3.50 ±0.05
Item
Symbol
Dimension(mm)
A
178 ± 1
2.40 Max.
Min
1.5 ± 0.1
250
-
Units
Max
ns
50
-
-
120
-
1.00
-
200
Reverse Recovery Time
(Note 4)
Trr
Symbol
Breakdown Voltage
BAV19W
BAV20W
(Note 2)
BAV21W
V
BAV19W
BAV20W
(Note 3)
BAV21W
nA
V
CJ
-
VF
IR
VR
100
pF
User Direction of Feed
Reverse Leakage Current
Type Number
200mA
-
Forward Voltage
5.0
1.25
VR=0, f=1.0MHz
-
Top Cover Tape
Carieer Tape
Any Additional Label (If Required)
TSC label
W1
D1
D2
A
Version : D10



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