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LLDB3 数据表(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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LLDB3 数据表(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 3 page ![]() LLDB3-LLDB3TG 150mW Bi-directional Trigger Diode Small Signal Diode Electrical Characteristics Min. Typ. Max. Break-over Voltage Symmetry C= 22nF + / -VBO Max. Break-over Current C= 22nF IBO Max. Dynamic Breakover Voltage IBO to IF=10mA ΔV Min. VB= IB Max. Output Voltage VO Min. Tape & Reel specification 36 34 Type Number LLDB3TG LLDB3 + / - 3 Break-over Voltage C= 22nF VBO 32 32 Embossment center P1 2.00 ±0.05 Overall tape thickness T 0.23±0.005 Punch hole position F 3.50 ±0.05 P0 4.00 ±0.10 Sprocke hole pitch Feed hole width D2 13.0 ± 0.20 Sprocke hole position E 1.75 ±0.10 Reel outside diameter D 178 ± 1 Reel inner diameter D1 55 Min 1.80 ±0.10 Sprocket hole d 1.50 ± 0.10 1.83 ±0.10 Carrier length B 3.73 ±0.10 Dimension μA 10 V 15 μA 100 Symbol V Units + / - 2 28 30 V 8.00 ±0.30 Reel width W1 14.4max Leakage Current 0.5VBO (MAX) Tape width W Item Symbol Carrier width A Carrier depth C *see diagram 1 5 V 59 Top Cover Tape Carieer Any Additional Label (If Required) TSC label Direction of Feed W1 D1 D2 D T C d P1 P0 A B F W E Version : C10 |
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