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MBRF3045CT 数据表(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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MBRF3045CT 数据表(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 2 page ![]() CREAT BY ART UL Recognized File # E-326243 Low power loss, high efficiency High current capability, low forward voltage drop Guard-ring for overvoltage protection Mechanical Data MBRF30XXCT = Specific Device Code G = Green Compound Y = Year WW = Work Week Maximum Ratings and Electrical Characteristics Rating at 25 ℃ ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol MBRF 3035 CT MBRF 3045 CT MBRF 3050 CT MBRF 3060 CT MBRF 2590 CT MBRF 30100 CT MBRF 30150 CT Unit VRRM 35 45 50 60 90 100 150 V VRMS 24 31 35 42 63 70 105 V VDC 35 45 50 60 90 100 150 V IRRM A 0.95 0.80 1.05 0.92 dV/dt V/us Cj pF RθjC OC/W TJ OC TSTG OC 360 10000 mA 580 480 V 20 15 0.82 0.73 0.78 0.70 0.90 30 30 200 A IF(AV) A IFSM Maximum Instantaneous Forward Voltage (Note 2) IF=15A, TA=25℃ IF=15A, TA=125℃ IF=30A, TA=25℃ IF=30A, TA=125℃ VF 0.82 IFRM 0.75 0.65 Plastic material used carriers Underwriters Laboratory Classification 94V-0 Weight: 1.69 grams Typical Junction Capacitance Type Number A Green compound with suffix "G" on packing code & prefix "G" on datecode For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Terminals: Pure tin plated, lead free, solderable per MIL-STD-750, Method 2026 Maximum Reverse Current @ Rated VR TA=25 ℃ TA=125 ℃ Polarity: As marked Mounting torque: 5 in. - lbs, max Mounting position:Any Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Peak Repetitive Reverse Surge Current (Note 1) Peak Forward Surge Current, 8.3 ms Single Half Sine- wave Superimposed on Rated Load (JEDEC method) MBRF3035CT - MBRF30150CT Marking Diagram ITO-220AB 30.0 AMPS. Isolated Schottky Barrier Rectifiers Dimensions in inches and (millimeters) Case:ITO-220AB molded plastic body Features High surge capability Metal silicon junction, majority carrier conduction High temperature soldering guaranteed: 260℃/10 seconds, at terminals Version:H11 Note 2: Pulse Test : 300uS Pulse Width, 1% Duty Cycle Note 1: 2.0uS Pulse Width, f=1.0KHz Operating Temperature Range Storage Temperature Range - 65 to + 150 - 65 to + 150 Maximum Average Forward Rectified Current at Tc=130℃ Peak Repetitive Forward Current (Rated VR, Square Wave, 20KHz) at Tc=130℃ Typical Thermal Resistance Per Leg 4 Voltage Rate of Change (Rated VR) IR 0.60 0.94 0.70 0.5 1 0.2 10 0.84 Pb RoHS COMPLIANCE RoHS COMPLIANCE |
类似零件编号 - MBRF3045CT |
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类似说明 - MBRF3045CT |
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