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RB495DRF 数据表(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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RB495DRF 数据表(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 3 page ![]() RB495D 40V, 350mA, SMD Schottky Diode Small Signal Diode Electrical Characteristics Reverse Breakdown Voltage IR= Forward Voltage IF= IF= Reverse Leakage Current VR= Junction Capacitance Carrier & Reel specification Dimension(mm) Macking User direction of Feed Note 1: A0, B0, and K0 are determined by component size. The clearance between the components and the cavity must be within 0.05 mm min. to 0.5 mm max. The component cannot rote more than 10o within the determined cavity. Note 2: If B1 exceeds 4.2 mm(0.165'') for 8 mm embossed tape, the tape may not feed through all tape feeders. Embossment center Overall tape thickness Tape width Reel width Feed hole width Sprocke hole position Punch hole position Sprocke hole pitch Item Symbol Sprocket hole Reel outside diameter Carrier depth K 14.4 Max. P1 2.00 ±0.10 T W W1 0.6 Max. 8.30 Max. Type Number 100uA 10mA 25V 200mA V CJ - VF IR V(BR) uA pF 50.0 0.55 VR=0, f=1.0MHz Symbol - - 40 - Min 178 ± 1 0.32 Units Max - 70 P0 4.00 ±0.10 E 13.0 ± 0.5 D2 F 3.50 ±0.05 V 1.75 ±0.10 Reel inner diameter 2.40 Max. D1 50 Min. 1.50 +0.10 D A Top Cover Tape Carieer Tape Any Additional Label (If Required) TSC label W1 D1 D2 A Version : E10 |
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