SILICON MULTI-EPITAXIAL

NPN TRANSISTOR

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Document Number 8314

Issue 1

Page 1 of 3

BUP53

•

Low VCE(SAT), Fast switching.

•

Hermetic TO3 Metal package.

•

Ideally suited for Motor Control, Switching

and Linear Applications

•

Screening Options Available

C = 25°C unless otherwise stated)

VCEX

Collector – Emitter Voltage

VBE = -1.5V

400V

VCEO

Collector – Emitter Voltage

250V

VEBO

Emitter – Base Voltage

10V

IC

Continuous Collector Current

60A

ICM

Peak Collector Current

80A

PD

Total Power Dissipation at

TC = 25°C

300W

Derate Above 25°C

1.72W/°C

TJ

Junction Temperature Range

-55 to +200°C

Tstg

Storage Temperature Range

-55 to +200°C

THERMAL PROPERTIES

Symbols

Parameters

Min.

Typ.

Max.

Units

RθJC

Thermal Resistance, Junction To Case

0.58

°C/W