SILICON EPITAXIAL

NPN TRANSISTOR

MG6331, MG6331-R

Semelab Limi

Semelab Limi

Semelab Limi

Semelab Limited

ted

ted

ted

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Document Number 9096

Issue 1

Page 2 of 5

Symbols

Parameters

Test Conditions

Min.

Typ

Max.

Units

ICBO

Collector-Cut-Off Current

MG6331

VCB = 230V

10

µA

MG6331-R

VCB = 260V

IEBO

Emitter-Cut-Off-Current

VEB = 5V

10

µA

V(BR)CEO

Collector-Base Breakdown

Voltage

IC = 25mA

MG6331

230

V

MG6331-R

260

VCE(sat)

(1)

Collector-Emitter Saturation

Voltage

IC = 5A

IB = 0.5A

2.0

V

hFE

Forward-current transfer

ratio

IC = 5A

VCE = 4V

70

140

DYNAMIC CHARACTERISTICS

fT

Transition Frequency

IE = -2A

VCE = 12V

60

MHz

COB

Output Capacitance

VCB = 10V

f = 1.0MHz

250

pF

Notes

Notes

Notes

Notes

Pulse Width ≤ 300us, δ ≤ 2%t