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STL17N3LLH6 数据表(PDF) 1 Page - STMicroelectronics |
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STL17N3LLH6 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 13 page ![]() November 2010 Doc ID 15535 Rev 3 1/13 13 STL17N3LLH6 N-channel 30 V, 0.0038 Ω, 17 A PowerFLAT™(3.3x3.3) STripFET™ VI DeepGATE™ Power MOSFET Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses ■ Very low switching gate charge Application Switching applications Description This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in a standard package, that makes it suitable for the most demanding DC-DC converter applications, where high power density has to be achieved. Figure 1. Pin-out configuration Order code VDSS RDS(on) max. ID STL17N3LLH6 30 V 0.0045 Ω 17 A (1) 1. The value is rated according Rthj-pcb PowerFLAT™ (3.3 x 3.3) 12 3 4 SS S G 8 76 5 DD D D BOTTOM VIEW Table 1. Device summary Order code Marking Package Packaging STL17N3LLH6 17N3L PowerFLAT™ (3.3 x 3.3) Tape and reel www.st.com |
类似零件编号 - STL17N3LLH6 |
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类似说明 - STL17N3LLH6 |
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