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BAS35 数据表(PDF) 1 Page - Diotec Semiconductor |
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BAS35 数据表(HTML) 1 Page - Diotec Semiconductor |
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1 / 2 page ![]() BAS31, BAS35 BAS31, BAS35 Surface Mount Small Signal Dual Diodes Kleinsignal-Doppel-Dioden für die Oberflächenmontage Version 2011-10-11 Dimensions - Maße [mm] Power dissipation – Verlustleistung 350 mW Repetitive peak reverse voltage Periodische Spitzensperrspannung 120 V Plastic case Kunststoffgehäuse SOT-23 (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) per diode / pro Diode BAS31, BAS35 Power dissipation – Verlustleistung 1) Ptot 350 mW 2) Max. average forward current (dc) Dauergrenzstrom IFAV 200 mA 2) Repetitive peak forward current Periodischer Spitzenstrom IFRM 600 mA 2) Non repetitive peak forward surge current Stoßstrom-Grenzwert tp ≤ 1 s tp ≤ 1 µs IFSM IFSM 1 A 2 A Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM 120 V Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55...+150°C -55...+150°C Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Forward voltage 3) Durchlass-Spannung 3) IF = 10 mA IF = 50 mA IF = 100 mA IF = 200 mA IF = 400 mA VF VF VF VF VF < 750 mV < 840 mV < 900 mV < 1.00 V < 1.25 V Leakage current Sperrstrom Tj = 25°C Tj = 150°C VR = 90 V IR < 100 nA VR = 90 V IR < 100 µA 1 Total power dissipation of both diodes − Summe der Verlustleistungen beider Dioden 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss 3 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 1.1 2.9 ±0.1 0.4 1 2 3 Type Code 1.9 |
类似零件编号 - BAS35 |
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类似说明 - BAS35 |
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