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P4SMAJ36A 数据表(PDF) 4 Page - Diotec Semiconductor |
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P4SMAJ36A 数据表(HTML) 4 Page - Diotec Semiconductor |
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4 / 4 page ![]() P4SMAJ5.0 ... P4SMAJ170CA 1 1 Mounted on P.C. board with 25 mm2 copper pads at each terminal Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lötpad) an jedem Anschluss 4 http://www.diotec.com/ © Diotec Semiconductor AG 10 10 1 0.1 2 [kW] P PP 0.1µs t 1µs 10µs 100µs 1ms 10ms P Non repetitive peak pulse power versus pulse width (10/1000 wave form) Einzel-Impuls-Spitzenleistung in Abh. von der Pulsdauer (10/1000-Impuls) 120 100 80 60 40 20 0 [%] P PP [°C] T A 150 100 50 0 I PP Peak pulse power/current vs. ambient temperature ) Impuls-Spitzenleistung/Strom vs. Umgebungstemp. ) 1 1 10/1000µs - pulse waveform 10/1000µs - Impulsform I PP P PP 100 80 60 40 20 0 0 t 1 2 3 4 [ms] [%] t P I /2 PPM P /2 PPM t = 10 µs r Typ. junction capacitance vs. stand-off voltage Typ. Sperrschichtkapazität über Sperrspannung 10 100 1000 10000 1 10 100 1000 VWM [V] Cj [pF] unidir. bidir. |
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