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311LP3E 数据表(PDF) 5 Page - Hittite Microwave Corporation |
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311LP3E 数据表(HTML) 5 Page - Hittite Microwave Corporation |
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5 / 6 page ![]() For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 9 9 - 12 Application Circuit Pin Descriptions Pin Number Function Description Interface Schematic 1, 2, 4 - 9, 11 - 16 N/C This pin may be connected to RF ground. 3RFIN This pin is DC coupled. An off chip DC blocking capacitor is required. 10 RFOUT RF output and DC Bias for the output stage. GND Package bottom must be connected to RF/DC ground. Recommended Component Values Component Frequency (MHz) 50 900 1900 2200 2400 3500 5200 5800 L1 270 nH 56 nH 18 nH 18 nH 15 nH 8.2 nH 3.3 nH 3.3 nH C1, C2 0.01 μF 100 pF 100 pF 100 pF 100 pF 100 pF 100 pF 100 pF Note: 1. Select Rbias to achieve Icq using equation below, Rbias > 22 Ohm. 2. External blocking capacitors are required on RFIN and RFOUT. Icq = Vs - 3.8 Rbias HMC311LP3 / 311LP3E v04.1108 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz |
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