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415LP3E 数据表(PDF) 1 Page - Hittite Microwave Corporation |
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415LP3E 数据表(HTML) 1 Page - Hittite Microwave Corporation |
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1 / 8 page ![]() For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 11 - 66 HMC415LP3 / 415LP3E GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz v03.0605 General Description Features Functional Diagram The HMC415LP3 & HMC415LP3E are high effi- ciency GaAs InGaP Heterojunction Bipolar Tran- sistor (HBT) MMIC Power amplifiers which operate between 4.9 and 5.9 GHz. The amplifier is pack- aged in a low cost, leadless surface mount pack- age with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 20 dB of gain, +26 dBm of saturated power, and 34% PAE from a +3V supply voltage. Vpd can be used for full power down or RF output power/current control. For +15 dBm OFDM output power (64 QAM, 54 Mbps), the HMC415LP3 & HMC415LP3E achieve an error vector magnitude (EVM) of 3.7% meeting 802.11a linearity requirements. Gain: 20 dB 34% PAE @ Psat = +26 dBm 3.7% EVM @ Pout = +15 dBm with 54 Mbps OFDM Signal Supply Voltage: +3V Power Down Capability Low External Part Count Electrical Specifications, T A = +25° C, Vs = 3V, Vpd = 3V Typical Applications This amplifier is ideal for use as a power amplifier for 4.9 - 5.9 GHz applications: • 802.11a WLAN • HiperLAN WLAN • Access Points • UNII & ISM Radios Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range 4.9 - 5.1 5.1 - 5.4 5.4 - 5.9 GHz Gain 18 20 18.5 20.5 16 19 dB Gain Variation Over Temperature 0.04 0.05 0.04 0.05 0.04 0.05 dB / °C Input Return Loss 10 9 8 dB Output Return Loss 10 12 8 dB Output Power for 1dB Compression (P1dB) Icq = 285 mA Icq = 200 mA 20 22.5 22.0 20.5 23.0 22.5 18 21.5 21.0 dBm Saturated Output Power (Psat) 25.5 26 24 dBm Output Third Order Intercept (IP3) 28 31 29 32 27 30 dBm Error Vector Magnitude (54 Mbps OFDM Signal @ +15 dBm Pout) Icq = 200 mA 3.7 % Noise Figure 6 6 6 dB Supply Current (Icq) Vpd = 0V/3V 0.002 / 285 0.002 / 285 0.002 / 285 mA Control Current (Ipd) Vpd = 3V 7 7 7 mA Switching Speed tOn, tOff 45 45 45 ns |
类似零件编号 - 415LP3E |
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类似说明 - 415LP3E |
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