2SC4585 datasheet(1/10 Pages) SHINDENGEN

部件名	2SC4585

功能描述	Switching Power Transistor(10A NPN)

PDF	10 Pages

Scroll/Zoom	100%

制造商	SHINDENGEN [Shindengen Electric Mfg.Co.Ltd]

网页	http://www.shindengen.co.jp/

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Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd

RATINGS

SHINDENGEN

OUTLINE DIMENSIONS

Unit : mm

Case : ITO-3P

HFX Series

Switching Power Transistor

10A NPN

2SC4585

(TP10W80HFX)

●Absolute Maximum Ratings

Item

Symbol

Conditions

Ratings

Unit

Storage Temperature

Tstg

-55～150

℃

Junction Temperature

Tj

150

℃

Collector to Base Voltage

VCBO

1200

V

Collector to Emitter Voltage

VCEO

800

V

Emitter to Base Voltage

VEBO

7V

Collector Current DC

IC

10A

Collector Current Peak

ICP

20

Base Current DC

IB

4

A

Base Current Peak

IBP

8

Total Transistor Dissipation

PT

Tc = 25℃

85

W

Dielectric Strength

Vdis

Terminals to case, AC 1 minute

2

kV

Mounting Torque

TOR

(Recommended torque : 0.5N･m)

0.8

N･m

●Electrical Characteristics (Tc=25℃)

Item

Symbol

Conditions

Ratings

Unit

Collector to Emitter Sustaining Voltage

VCEO(sus)

IC = 0.2A

Min 800

V

Collector Cutoff Current

ICBO

At rated Voltage

Max 0.1

mA

ICEO

Max 0.1

Emitter Cutoff Current

IEBO

At rated Voltage

Max 0.1

mA

DC Current Gain

hFE

VCE = 5V, IC = 5A

Min 8

hFEL

VCE = 5V, IC = 1mA

Min 7

Collector to Emitter Saturation Voltage

VCE(sat)

IC = 5A

Max 1.0

V

Base to Emitter Saturation Voltage

VBE(sat)

IB = 1A

Max 1.5

V

Thermal Resistance

θjc

Junction to case

Max 1.47

℃/W

Transition Frequency

fT

VCE = 10V, IC = 1A

TYP 8

MHz

Turn on Time

ton

IC = 5A

Max 0.5

Storage Time

ts

IB1 = 1A, IB2 = 2A

Max 3.5

μs

Fall Time

tf

RL = 50Ω, VBB2 = 4V

Max 0.3

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