For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824

Phone: 978-250-3343

Fax: 978-250-3373

Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

11

11 - 2

Parameter

conditions

min.

typ.

max.

units

RF Output

rF Frequency range

4.0

7.0

GHz

rF return loss

8

dB

LO Input

lo Frequency range

4.0

7.0

GHz

lo input Power

-3

+3

+9

dBm

lo Port return loss

10

dB

Baseband Input Port (Note 1)

Baseband Port Bandwidth

With 50Ω source & external 10 pF shunt cap to ground.

refer to Hmc496lP3 application circuit.

dc

250

mHz

Baseband input dc Voltage (Vbbdc)

this parameter can be varied in order to optimize

the device performance over temperature and/or supply.

1.0

1.3

1.6

V

Baseband input dc Bias current (ibbdc)

single-ended

32

µa

Baseband input capacitance

single-ended. de-embeded to the part pin.

0.8

pF

DC Power Requirements

see test conditions Below

supply Voltage (Vcc)

2.7

3.0

3.3

V

supply current (icc)

93

ma

calibrated vs. uncalibrated test results

during the uncalibrated sideband and carrier suppression tests, care is taken to ensure that the i/q signal paths from

the Vector signal Generator (VsG) to the device under test (dut) are equal. the “uncalibrated, +25 °c” sideband

and carrier suppression plots were measured at room temperature, while the “uncalibrated, over temperature”

sideband and carrier suppression plots represent the worst case uncalibrated suppression levels measured at t=

-40 °c, +25 °c, and +85 °c.

the “calibrated, +25 °c” sideband suppression data was plotted after a manual adjustment of the i/q amplitude

balance and i/q phase offset (skew) at +25c, and an lo input power level of + 3 dBm. this adjustment setting was

held constant during tests over lo input power level and temperature. the “calibrated, over temperature” plots

represent the worst case calibrated sideband suppression levels at t= -40 °c, +25 °c, and +85 °c.

the “calibrated, +25 °c” carrier suppression data was plotted after a manual adjustment of the ip/in & qp/qn dc

offsets at +25 °c, and an lo input power level of + 3 dBm. this adjustment setting was held constant during tests

over lo input power level and temperature. the “calibrated, over temperature” plots represent the worst case carrier

suppression levels measured at t= -40 °c, +25 °c, and +85 °c.

Parameter

condition

temperature

+25 °c

Baseband input Frequency

200 kHz

Baseband input dc Voltage (Vbbdc)

1.3V

Baseband input ac Voltage

(Peak to Peak differential, i and q)

1.2V

Baseband input ac Voltage for oiP3 measurement (Peak to Peak differential, i and q)

600 mV per tone @ 150 & 250 kHz

Frequency offset for output Noise measurements

20 mHz

supply

+3.0V

lo input Power

+3 dBm

lo input mode

single-ended

mounting configuration

refer to Hmc496lP3 application schematic Herein

sideband & carrier suppression

uncalibrated

rF output mode

differential

SiGe WIDEBAND DIRECT

MODULATOR RFIC, 4 - 7 GHz

v05.0811

Note 1: When I leads Q, the output spectrum results in lower sideband as the desired signal.