2SC4669 datasheet(1/9 Pages) SHINDENGEN

部件名	2SC4669

功能描述	Switching Power Transistor(10A NPN)

PDF	9 Pages

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制造商	SHINDENGEN [Shindengen Electric Mfg.Co.Ltd]

网页	http://www.shindengen.co.jp/

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Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd

RATINGS

SHINDENGEN

LSV Series

Switching Power Transistor

OUTLINE DIMENSIONS

Unit : mm

10A NPN

2SC4669

(TE10S4)

Case : E-pack

●Absolute Maximum Ratings

Item

Symbol

Conditions

Ratings

Unit

Storage Temperature

Tstg

-55～150

℃

Junction Temperature

Tj

150

℃

Collector to Base Voltage

VCBO

60

V

Collector to Emitter Voltage

VCEO

40

V

Emitter to Base Voltage

VEBO

7V

Collector Current DC

IC

10A

Collector Current Peak

ICP

20

A

Base Current DC

IB

1.5

A

Base Current Peak

IBP

2A

Total Transistor Dissipation

PT

Tc = 25℃

10

W

●Electrical Characteristics (Tc=25℃)

Item

Symbol

Conditions

Ratings

Unit

Collector to Emitter Sustaining Voltage

VCEO(sus)

IC = 0.1A

Min 40

V

Collector Cutoff Current

ICBO

At rated Voltage

Max 0.1

mA

ICEO

Max 0.1

Emitter Cutoff Current

IEBO

At rated Voltage

Max 0.1

mA

DC Current Gain

hFE

VCE = 2V, IC = 5A

Min 70

Collector to Emitter Saturation Voltage

VCE(sat)

IC = 5A

Max 0.3

V

Base to Emitter Saturation Voltage

VBE(sat)

IB = 0.5A

Max 1.2

V

Thermal Resistance

θjc

Junction to case

Max 12.5

℃/W

Transition Frequency

fT

VCE = 10V, IC = 1A

TYP 50

MHz

Turn on Time

ton

Max 0.3

IC = 5A

Storage Time

ts

IB1 = 0.5A, IB2 = 0.5A

Max 1.5

μs

RL = 5Ω, VBB2 = 4V

Fall Time

tf

Max 0.5

类似零件编号 - 2SC4669

制造商	部件名	数据表	功能描述
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