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BCP080T 数据表(PDF) 1 Page - BeRex Corporation |
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BCP080T 数据表(HTML) 1 Page - BeRex Corporation |
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1 / 5 page  www.berex.com BeRex, Inc. 1735 North 1 st Street #302 San Jose, CA 95112 tel. (408) 452-5595 September 2011 Specifications are subject to change without notice. ©BeRex 2011 Rev. 1.2 BCP080T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 800µm) The BeRex BCP080T is a GaAs Power pHEMT with a nominal 0.25 micron gate length and 800 micron gate width making the product ideally suited for applications where high-gain and medium power in the 1000 MHz to 26.5 GHz frequency range are required. The product may be used in either wideband (6-18 GHz) or narrow-band applications. The BCP080T is produced using state of the art metallization with SI3N4 passivation and is screened to assure reliability. PRODUCT FEATURES 30 dBm Typical Output Power 10.5 dB Typical Gain @ 12 GHz 0.25 X 800 Micron Recessed Gate APPLICATIONS Commercial Military / Hi-Rel. Test & Measurement ELECTRICAL CHARACTERISTIC (TUNED FOR POWER) Ta = 25° C SYMBOL PARAMETER/TEST CONDITIONS TEST FREQ. MIN. TYPICAL MAX. UNIT P1dB Output Power @ P1dB (Vds = 8V, Ids = 50% Idss) 12 GHz 18 GHz 29.0 30.0 30.0 dBm G1dB Gain @ P1dB (Vds = 8V, Ids = 50% Idss) 12 GHz 18 GHz 9.5 10.5 7.5 dB PAE PAE @ P1dB (Vds = 8V, Ids = 50% Idss) 12 GHz 18 GHz 60 55 % Idss Saturated Drain Current (Vgs = 0V, Vds = 1.0V) 160 240 320 mA Gm Transconductance (Vds = 3V, Vgs = 50% Idss) 320 mS Vp Pinch-off Voltage (Ids = 800 µA, Vds = 2V) -2.5 -1.1 -0.5 V BVgd Drain Breakdown Voltage (Igd = 0.8 mA, source open) -15 -12.0 V BVgs Source Breakdown Voltage (Ig = 0.8 mA, drain open) -13 V Rth Thermal Resistance (Au-Sn Eutectic Attach) 61 °C/W |
类似零件编号 - BCP080T |
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类似说明 - BCP080T |
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