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HMC618LP3E 数据表(PDF) 9 Page - Hittite Microwave Corporation |
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HMC618LP3E 数据表(HTML) 9 Page - Hittite Microwave Corporation |
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9 / 14 page ![]() For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7 7 - 9 Output IP3 vs. Temperature [1] 22 24 26 28 30 32 34 36 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 +25C +85C -40C FREQUENCY (GHz) HMC618LP3 / 618LP3E v08.1210 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz Output IP3 vs. Temperature [2] 22 24 26 28 30 32 34 36 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 +25 C +85 C - 40 C FREQUENCY (GHz) [1] Vdd = 5V, rbias = 470 ohm [2] Vdd = 3V, rbias = 10K ohm [3] with Vdd= 3V and rbias < 1K ohm may result in the part becoming conditionally stable which is not recommended. Vdd1 = Vdd2 (V) rbias idd1 + idd2 (mA) min (ohms) max (ohms) r1 (ohms) 3V 1K [3] open Circuit 1k 28 1.5k 34 10k 47 5V 0 open Circuit 120 71 270 84 470 89 Absolute Bias Resistor Range & Recommended Bias Resistor Values for Idd Psat vs. Temperature [1] 8 10 12 14 16 18 20 22 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 +25C +85C -40C FREQUENCY (GHz) Psat vs. Temperature [2] 8 10 12 14 16 18 20 22 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 +25 C +85 C - 40 C FREQUENCY (GHz) 1200 to 1700 MHz Tune |
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