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HMC618LP3E 数据表(PDF) 9 Page - Hittite Microwave Corporation

部件名 HMC618LP3E
功能描述  GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz
PDF  14 Pages
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制造商  HITTITE [Hittite Microwave Corporation]
网页  http://www.hittite.com
标志 HITTITE - Hittite Microwave Corporation

HMC618LP3E 数据表(HTML) 9 Page - Hittite Microwave Corporation

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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
7
7 - 9
Output IP3 vs. Temperature [1]
22
24
26
28
30
32
34
36
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
+25C
+85C
-40C
FREQUENCY (GHz)
HMC618LP3 / 618LP3E
v08.1210
GaAs SMT pHEMT LOW NOISE
AMPLIFIER, 1.2 - 2.2 GHz
Output IP3 vs. Temperature [2]
22
24
26
28
30
32
34
36
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
+25 C
+85 C
- 40 C
FREQUENCY (GHz)
[1] Vdd = 5V, rbias = 470 ohm [2] Vdd = 3V, rbias = 10K ohm
[3] with Vdd= 3V and rbias < 1K ohm may result in the part becoming conditionally stable which is not recommended.
Vdd1 = Vdd2 (V)
rbias
idd1 + idd2 (mA)
min (ohms)
max (ohms)
r1 (ohms)
3V
1K [3]
open Circuit
1k
28
1.5k
34
10k
47
5V
0
open Circuit
120
71
270
84
470
89
Absolute Bias Resistor
Range & Recommended Bias Resistor Values for Idd
Psat vs. Temperature [1]
8
10
12
14
16
18
20
22
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
+25C
+85C
-40C
FREQUENCY (GHz)
Psat vs. Temperature [2]
8
10
12
14
16
18
20
22
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
+25 C
+85 C
- 40 C
FREQUENCY (GHz)
1200 to 1700 MHz Tune



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