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2N3773 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N3773 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3773 DESCRIPTION ・With TO-3 package ・Complement to type 2N6609 ・High DC current gain ・Low saturation voltage ・High safe operating area APPLICATIONS ・Designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 160 V VCEO Collector-emitter voltage Open base 140 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 16 A ICM Collector current-peak 30 A IB Base current 4 A IBM Base current-peak 15 A PD Total Power Dissipation Derate above 25℃ TC=25℃ 150 0.855 W W/℃ Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ Fig.1 simplified outline (TO-3) and symbol |
类似零件编号 - 2N3773 |
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类似说明 - 2N3773 |
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