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2N5191 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 2N5191
功能描述  Silicon NPN Power Transistors
PDF  3 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

2N5191 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  2N5191 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2N5191 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2N5191 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
2N5190 2N5191 2N5192
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
2N5190
40
2N5191
60
VCEO(SUS)
Collector-emitter
sustaining voltage
2N5192
IC=0.1A; IB=0
80
V
VCEsat-1
Collector-emitter saturation voltage
IC=1.5A ;IB=0.15A
0.6
V
VCEsat-2
Collector-emitter saturation voltage
IC=4A ;IB=1A
1.4
V
VBE
Base-emitter on voltage
IC=1.5A ; VCE=2V
1.2
V
2N5190
VCE=40V; IB=0
2N5191
VCE=60V; IB=0
ICEO
Collector cut-off current
2N5192
VCE=80V; IB=0
1.0
mA
2N5190
VCB=40V; IE=0
2N5191
VCB=60V; IE=0
ICBO
Collector cut-off current
2N5192
VCB=80V; IE=0
0.1
mA
2N5190
VCE=40V; VBE(off)=1.5V
TC=125℃
0.1
2.0
2N5191
VCE=60V; VBE(off)=1.5V
TC=125℃
0.1
2.0
ICEX
Collector cut-off current
2N5192
VCE=80V; VBE(off)=1.5V
TC=125℃
0.1
2.0
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1.0
mA
2N5190
2N5191
25
100
hFE-1
DC current gain
2N5192
IC=1.5A ; VCE=2V
20
80
2N5190
2N5191
10
hFE-2
DC current gain
2N5192
IC=4A ; VCE=2V
7
fT
Transition frequency
IC=1A ; VCE=10V;f=1MHz
2
MHz



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