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2N5239 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N5239 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2N5239 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; IB=0 225 V V(BR)EBO Emitter-base breakdown voltage IE=20mA ; IC=0 6 V VCEsat-1 Collector-emitter saturation voltage IC=2A; IB=0.25A 2.5 V VCEsat-2 Collector-emitter saturation voltage IC=4.5A; IB=1.125A 5.0 V VBE Base-emitter on voltage IC=2A ; VCE=10V 3.0 V ICEV Collector cut-off current VCE=300V; VBE=-1.5V TC=150℃ 4.0 5.0 mA ICEO Collector cut-off current VCE=200V; IB=0 5.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 5.0 mA hFE-1 DC current gain IC=0.4A ; VCE=10V hFE -2 DC current gain IC=2A ; VCE=10V 20 80 hFE-3 DC current gain IC=4.5A ; VCE=10V 5 COB Output capacitance IE=0 ; VCB=10V;f=1MHz 250 pF fT Transition frequency IC=0.2A ; VCE=10V 2 MHz |
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