2N5301 datasheet(1/3 Pages) ISC

部件名	2N5301

功能描述	Silicon NPN Power Transistors

PDF	3 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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1 / 3 page

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2N5301 2N5302 2N5303

DESCRIPTION

・With TO-3 package

・Complement to type 2N4398/4399/5745

・Low collector/saturation voltage

・Excellent safe operating area

APPLICATIONS

・For use in power amplifier and switching

circuits applications.

PINNING

DESCRIPTION

1

Base

2

Emitter

3

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

2N5301

40

2N5302

60

VCBO

Collector-base voltage

2N5303

Open emitter

80

V

2N5301

40

2N5302

60

VCEO

Collector-emitter voltage

2N5303

Open base

80

V

VEBO

Emitter-base voltage

Open collector

5

V

2N5301/5302

30

IC

Collector current

2N5303

20

A

IB

Base current

7.5

A

PD

Total power dissipation

TC=25℃

200

W

Tj

Junction temperature

200

℃

Tstg

Storage temperature

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-c

Thermal resistance junction to case

0.875

℃/W

Fig.1 simplified outline (TO-3) and symbol

类似零件编号 - 2N5301

制造商	部件名	数据表	功能描述
Mospec Semiconductor	2N5301	178Kb / 4P	POWER TRANSISTORS(200W)
ON Semiconductor	2N5301	251Kb / 6P	POWER TRANSISTORS NPN SILICON 1995
List of Unclassifed Man...	2N5301	347Kb / 8P	Power Transistors
Solid States Devices, I...	2N5301	199Kb / 2P	200 WATT NPN SILICON POWER TRANSISTOR
Savantic, Inc.	2N5301	114Kb / 3P	Silicon NPN Power Transistors

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类似说明 - 2N5301

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