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2N5496 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 2N5496
功能描述  Silicon NPN Power Transistors
PDF  3 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

2N5496 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  2N5496 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2N5496 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2N5496 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
2N5490 2N5492 2N5494 2N5496
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
2N5490/5494
40
2N5492
55
VCEO(SUS)
Collector-emitter
sustioning voltage
2N5496
IC=0.1A ;IB=0
70
V
2N5490
IC=2.0A;IB=0.2A
2N5492
IC=2.5A;IB=0.25A
2N5494
IC=3.0A;IB=0.3A
VCEsat
Collector-emitter
saturation voltage
2N5496
IC=3.5A;IB=0.35A
1.0
V
2N5490
IC=2.0A ; VCE=4V
1.1
2N5492
IC=2.5A ; VCE=4V
1.3
2N5494
IC=3.0A ; VCE=4V
1.5
VBE
Base-emitter on voltage
2N5496
IC=3.5A ; VCE=4V
1.7
V
2N5492
VCE=70V;VBE=1.5V
2N5490/5494
VCE=55V;VBE=1.5V
ICEV
Collector cut-off current
2N5496
VCE=85V;VBE=1.5V
1.0
mA
ICER
Collector cut-off current
VCE=Rated VCEO;RBE=100Ω
0.5
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1.0
mA
2N5490
IC=2.0A ; VCE=4V
2N5492
IC=2.5A ; VCE=4V
2N5494
IC=3.0A ; VCE=4V
hFE
DC current gain
2N5496
IC=3.5A ; VCE=4V
20
100
fT
Transition frequency
IC=0.5A ; VCE=4V
0.8
MHz



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