2N5603 datasheet(2/3 Pages) ISC

部件名	2N5603

功能描述	Silicon PNP Power Transistors

PDF	3 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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2 / 3 page

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2N5597 2N5599 2N5601 2N5603

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

2N5597

-60

2N5599/5601

-80

VCEO(SUS)

Collector-emitter

sustaining voltage

2N5603

IC=-50mA ;IB=0

-100

VCEsat

Collector-emitter saturation voltage

IC=-1A; IB=-0.1A

-1.0

VBE

Base-emitter on voltage

IC=-1A ; VCE=-5V

-1.5

ICBO

Collector cut-off current

VCB=Rated VCBO; IE=0

-0.1

ICEO

Collector cut-off current

VCE= Rated VCEO,IB=0

-1.0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

-0.1

2N5597/5601

200

hFE

DC current gain

2N5599/5603

IC=-1A ; VCE=-5V

2N5597/5601

Transition frequency

2N5599/5603

IC=-0.5A ; VCE=-10V

MHz

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