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2N5664 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 2N5664
功能描述  Silicon NPN Power Transistors
PDF  3 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

2N5664 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  2N5664 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2N5664 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2N5664 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
2N5664 2N5665
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
2N5664
200
V(BR)CEO
Collector-emitter
breakdown voltage
2N5665
IC=10mA ; IB=0
300
V
V(BR)EBO
Emitter-base breakdown voltage
IE=10μA ; IC=0
6
V
2N5664
IC=3A; IB=0.3A
VCEsat-1
Collector-emitter
saturation voltage
2N5665
IC=3A; IB=0.6A
0.4
V
VCEsat-2
Collector-emitter saturation voltage
IC=5A; IB=1A
1.0
V
2N5664
IC=3A; IB=0.3A
VBEsat-1
Base-emitter saturation
voltage
2N5665
IC=3A; IB=0.6A
1.2
V
VBEsat-2
Base-emitter saturation voltage
IC=5A; IB=1A
1.5
V
2N5664
VCE=200V;VBE(off)=1.5V
ICES
Collector cut-off current
2N5665
VCE=300V;VBE(off)=1.5V
0.2
mA
2N5664
VCB=250V; IE=0
ICBO
Collector cut-off current
2N5665
VCB=400V; IE=0
1.0
mA
2N5664
40
hFE-1
DC current gain
2N5665
IC=0.5A ; VCE=2V
25
2N5664
40
120
hFE-2
DC current gain
2N5665
IC=1A ; VCE=5V
25
75
2N5664
15
hFE-3
DC current gain
2N5665
IC=3A ; VCE=5V
10
hFE-4
DC current gain
IC=5A ; VCE=5V
5
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
120
pF
ton
Turn-on time
VCC=30V;IC=1A;IB1=-IB2=30mA
0.25
μs
2N5664
1.5
toff
Turn-off time
2N5665
VCC=30V;IC=1A;IB1=-IB2=50mA
2.0
μs



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