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2N5871 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N5871 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page  Inchange Semiconductor Product Specification 2 Silicon PNP Power Transistors 2N5871 2N5872 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2N5871 -60 VCEO(SUS) Collector-emitter sustaining voltage 2N5872 IC=-0.1A ;IB=0 -80 V VCEsat Collector-emitter saturation voltage IC=-5A;IB=-0.5A -1.0 V VBEsat Base-emitter saturation voltage IC=-5A; IB=-0.5A -1.5 V ICBO Collector cut-off current VCB=ratedVCBO; IB=0 -1.0 mA 2N5871 VCE=-30V; IB=0 ICEO Collector cut-off current 2N5872 VCE=-40V; IB=0 -2.0 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -1.0 mA hFE DC current gain IC=-2.5A ; VCE=-4V 20 100 fT Trainsistion frequency IC=-0.5A ; VCE=-10V 4 MHz |
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