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2N6029 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 2N6029
功能描述  Silicon PNP Power Transistors
PDF  3 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

2N6029 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  2N6029 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2N6029 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2N6029 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon PNP Power Transistors
2N6029 2N6030
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
2N6029
-100
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6030
IC=-0.2A ;IB=0
-120
V
VCEsat-1
Collector-emitter saturation voltage
IC=-10A; IB=-1A
-1.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=-16A ;IB=-4A
-2.0
V
VBEsat
Base-emitter saturation voltage
IC=-10A; IB=-1A
-1.8
V
VBE
Base-emitter on voltage
IC=-8A ; VCE=-2V
-1.5
V
ICBO
Collector cut-off current
VCB=ratedVCBO; IE=0
-1.0
mA
2N6029
VCE=-50V; IB=0
ICEO
Collector cut-off current
2N6030
VCE=-60V; IB=0
-1.0
mA
VCE=ratedVCB
-1.0
ICEV
Collector cut-off current
(VBE(off)=1.5V)
VCE=ratedVCB; TC=150℃
-5.0
mA
IEBO
Emitter cut-off current
VEB=-7V; IC=0
-1.0
mA
2N6029
25
100
hFE-1
DC current gain
2N6030
IC=-8A ; VCE=-2V
20
80
hFE-2
DC current gain
IC=-16A ; VCE=-2V
4
COB
Output capacitance
IE=0 ; VCB=-10V ;f=0.1MHz
1000
pF
fT
Transition frequency
IC=-1A ; VCE=-20V
1.0
MHz



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