2N6077 datasheet(2/3 Pages) ISC

部件名	2N6077

功能描述	Silicon NPN Power Transistors

PDF	3 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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2 / 3 page

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2N6077 2N6078 2N6079

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

2N6077

275

2N6078

250

VCEO(SUS)

Collector-emitter

sustaining voltage

2N6079

IC=0.1A ;IB=0

350

VCEsat

Collector-emitter saturation voltage

IC=5A; IB=0.5A

1.0

VBEsat

Base-emitter saturation voltage

IC=5A; IB=0.5A

1.2

ICEO

Collector cut-off current

VCE= Rated VCEO; IB=0

2.0

ICEX

Collector cut-off current

VCE=Rated VCEO; VBE(off)=1.5V

TC=125℃

0.1

1.0

ICBO

Collector cut-off current

VCB=Rated VCBO; IE=0

0.1

IEBO

Emitter cut-off current

VEB=6V; IC=0

1.0

hFE

DC current gain

IC=1.2A ; VCE=1V

Transition frequency

IC=0.5A;VCE=10V;f=1MHz

MHz

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