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2N6259 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N6259 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Website:www.iscsemi.cn 2 isc Silicon NPN Power Transistor 2N6259 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0 150 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 16A; IB= 3.2A 2.5 V VBE(on) Base-Emitter On Voltage IC= 8A ; VCE= 2V 2.0 V ICEO Collector Cutoff Current VCE= 130V; IB= 0 10 mA ICEX Collector Cutoff Current VCE= 150V; VBE(off)= 1.5V 2.0 mA ICBO Collector Cutoff Current VCB= 150V; IE= 0 2.0 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 5.0 mA hFE-1 DC Current Gain IC= 8A ; VCE= 2V 15 60 hFE-2 DC Current Gain IC= 16A ; VCE= 4V 10 |
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