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2N6338 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 2N6338
功能描述  isc Silicon NPN Power Transistors
PDF  2 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

2N6338 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  2N6338 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2N6338 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Website：www.iscsemi.cn
2
isc Silicon NPN Power Transistors
2N6338/6339/6340/6341
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
2N6338
100
2N6339
120
2N6340
140
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
2N6341
IC= 50mA ; IB= 0
150
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 10A; IB= 1A
1.0
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 25A; IB= 2.5A
1.8
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= 10A; IB= 1A
1.8
V
VBE(sat)-2
Base-Emitter Saturation Voltage
IC= 25A; IB= 2.5A
2.5
V
VBE(on)
Base-Emitter On Voltage
IC= 10A ; VCE= 2V
1.8
V
2N6338
VCE= 50V; IB= 0
50
2N6339
VCE= 60V; IB= 0
50
2N6340
VCE= 70V; IB= 0
50
ICEO
Collector
Cutoff Current
2N6341
VCE= 75V; IB= 0
50
μA
ICBO
Collector Cutoff Current
VCB= RatedVCBO; IE= 0
10
μA
ICEX
Collector Cutoff Current
VCE= RatedVCEO;VBE(off)= 1.5V
VCE= RatedVCEO;VBE(off)= 1.5V,TC=150℃
10
1.0
μA
mA
IEBO
Emitter Cutoff Current
VEB= 6V; IC=0
0.1
mA
hFE-1
DC Current Gain
IC= 0.5A ; VCE= 2V
50
hFE-2
DC Current Gain
IC= 10A ; VCE= 2V
30
120
hFE-3
DC Current Gain
IC= 25A ; VCE= 2V
12
fT
Current-Gain
—Bandwidth Product
IC= 1A ; VCE= 10V ;ftest= 10MHz
40
MHz
COB
Output Capacitance
IE= 0 ; VCB= 10V ;ftest= 0.1MHz
300
pF
Switching Times
tr
Rise Time
VCC= 80V; IC= 10A;IB1= 1A, VBE(off)= 6V
0.3
μs
tstg
Storage Time
1.0
μs
tf
Fall Time
VCC= 80V; IC= 10A; IB1= -IB2= 1A,
0.25
μs



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