2N6436 datasheet(1/3 Pages) ISC

部件名	2N6436

功能描述	Silicon PNP Power Transistors

PDF	3 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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1 / 3 page

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2N6436 2N6437 2N6438

DESCRIPTION

・With TO-3 package

・High DC current gain

・Fast switching times

・Low collector saturation voltage

・Complement to type 2N6338~2N6341

APPLICATIONS

・For use in industrial-military power amplifier

and switching circuit applications

PINNING(see Fig.2)

DESCRIPTION

1

Base

2

Emitter

3

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

2N6436

-100

2N6437

-120

VCBO

Collector-base voltage

2N6438

Open emitter

-140

V

2N6436

-80

2N6437

-100

VCEO

Collector-emitter voltage

2N6438

Open base

-120

V

VEBO

Emitter-base voltage

Open collector

-6

V

IC

Collector current

-25

A

ICM

Collector current-peak

-50

A

IBC

Base current

-10

A

PD

Total power dissipation

TC=25℃

200

W

Tj

Junction temperature

200

℃

Tstg

Storage temperature

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-c

Thermal resistance junction to case

0.875

℃/W

Fig.1 simplified outline (TO-3) and symbol

类似零件编号 - 2N6436

制造商	部件名	数据表	功能描述
Mospec Semiconductor	2N6436	191Kb / 4P	POWER TRANSISTORS(25A,200W)
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