2N6653 datasheet(2/3 Pages) ISC

部件名	2N6653

功能描述	Silicon NPN Power Transistors

PDF	3 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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2 / 3 page

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2N6653

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-emitter sustaining voltage

IC=0.1A ; IB=0

300

V(BR)CBO

Collector-emitter breakdown voltage

IC=1mA ; IE=0

350

VCEsat-1

Collector-emitter saturation voltage

IC=10A; IB=2A

1.5

VCEsat-2

Collector-emitter saturation voltage

IC=15A; IB=3A

1.8

VBEsat

Base-emitter saturation voltage

IC=15A; IB=3A

1.8

ICEV

Collector cut-off current

VCE=350V;VBE(off)=-1.5V

TC=150℃

0.1

2.0

IEBO

Emitter cut-off current

VEB=6V; IC=0

0.1

hFE-1

DC current gain

IC=1A ; VCE=5V

hFE -2

DC current gain

IC=15A ; VCE=5V

Transition frequency

IC=0.5A ; VCE=10V

MHz

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