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2N6739 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N6739 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Website:www.iscsemi.cn isc Silicon NPN Power Transistor 2N6739 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA; IB= 0 350 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A 1 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 4A 2 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A 1.6 V ICEV Collector Cutoff Current VCEV= 550V;VBE(off)=-1.5V VCEV= 550V;VBE(off)=-1.5V;TJ= 100℃ 0.1 1.0 mA IEBO Emitter Cutoff Current VEB= 8V; IC= 0 2 mA hFE DC Current Gain IC= 5A ; VCE= 3V 10 40 fT Current-Gain —Bandwidth Product IC= 0.2A; VCE= 10V, ftest= 1MHz 10 60 MHz Switching Times; Resistive Load td Delay Time 0.1 μs tr Rise Time 0.4 μs ts Storage Time 2.5 μs tf Fall Time IC= 5A; IB1= -IB2= 1A,VCC= 125V; tp= 20μs, Duty Cycle≤1% 0.5 μs |
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