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2N6833 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 2N6833
功能描述  isc Silicon NPN Power Transistor
PDF  2 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

2N6833 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  2N6833 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2N6833 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Website：www.iscsemi.cn
2
isc Silicon NPN Power Transistor
2N6833
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC=100mA ; IB=0
450
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 1.5A; IB= 0.15A
1.0
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 3A; IB= 0.4A
IC= 3A; IB= 0.4A,TC=100℃
2.5
2.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 3A; IB= 0.4A
IC= 3A; IB= 0.4A,TC=100℃
1.5
1.5
V
ICEV
Collector Cutoff Current
VCEV= 850V;VBE(off)= 1.5V
VCEV= 850V;VBE(off)= 1.5V;TC=100℃
0.25
1.5
mA
ICER
Collector Cutoff Current
VCE= 850V; RBE= 50Ω,TC= 100℃
2.5
mA
IEBO
Emitter Cutoff Current
VEB= 6.0V; IC=0
1.0
mA
hFE-1
DC Current Gain
IC= 3A ; VCE= 5V
7.5
30
hFE-2
DC Current Gain
IC= 5A ; VCE= 5V
5
fT
Current Gain-Bandwidth Product
IC= 0.25A ;VCE= 10V; ftest=10MHz
15
75
MHz
COB
Output Capacitance
IE= 0; VCB= 10V; ftest=1.0kHz
20
200
pF
Switching times;Resistive Load
td
Delay Time
0.03
0.1
μs
tr
Rise Time
0.1
0.3
μs
ts
Storage Time
1.0
3.0
μs
tf
Fall Time
IC= 3A , VCC= 250V;
IB1= 0.4A; IB2= -0.8A;
PW= 30μs; RB2= 8Ω
Duty Cycle≤2.0%
0.06
0.3
μs



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