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2P4M 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2P4M 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 1 page ![]() Thyristors INCHANGE 2P4M PLASTIC MOLDED THYRISTOR Features ・With TO-202 package K A G ・1cathode 2 anode 3 gate Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 400 (note:RGK=1kΩ) V VRRM Repetitive peak reverse voltage 400 (note:RGK=1kΩ) V IT(AV) On-state current 2(Tc=77℃,θ=180 。 Single phase(1/2wave) A ITSM Surge non-repetitive on-state current 20 A PGM Peak gate power dissipation 0.5 (f ≥50Hz, Duty ≤10%) W PG(AV) Average gate power dissipation 0.1 W IFGM Peak gate forward current 0.2 (f ≥50Hz, Duty ≤10%) A VRGM Peak gate reverse voltage 6 V Tj Junction temperature -40 to + 125 ℃ Electrical characteristics (Ta=25℃) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitive peak reverse current VRM=VRRM,Tj=125℃,RGK=1kΩ 100 μA IDRM Repetitive peak off-state current VDM=VDRM,Tj=125℃,RGK=1kΩ 100 μA VTM On-state voltage ITM=4A 1.8 V IGT Gate-trigger current VDM=6V;RL=100Ω,RGK=1kΩ 100 μA VGT Gate-trigger voltage VDM=6V;RL=100Ω,RGK=1kΩ 0.8 V VGD Gate non-trigger voltage VDRM=1/2VDRM,Tj=125℃,RGK=1kΩ 0.2 V IH Holding current VD=24V; RGK=1kΩ,ITM=4A 5 mA Rth(j-c) Thermal resistance Junction to case 10 ℃/W |
类似零件编号 - 2P4M |
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类似说明 - 2P4M |
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