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2SB337 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 2SB337
功能描述  isc Silicon PNP Power Transistors
PDF  2 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

2SB337 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SB337 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SB337 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistors
2SB337
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CER
Collector-Emitter Breakdown Voltage
IC= -0.6A; RBE= 68Ω
-30
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -4A; IB= -0.4A
B
0.29
V
VBE(on)
Base-Emitter On Voltage
IC= -1A; VCE= -2V
0.38
V
ICBO
Collector Cutoff Current
VCB= -30V; IE= 0
-1.0
mA
hFE
DC Current Gain
IC= -1A; VCE= -2V
50
165
hFE Classifications
A
B
50-100
80-165
isc Website：www.iscsemi.cn



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