2SB631 datasheet(2/4 Pages) ISC

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Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB631 2SB631K

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

2SB631

-100

V(BR)CEO

Collector-emitter

breakdown voltage

2SB631K

IC=-1mA; RBE=∞

-120

2SB631

-100

V(BR)CBO

Collector-base

breakdown voltage

2SB631K

IC=-10μA ;IE=0

-120

V(BR)EBO

Emitter-base breakdown voltage

IE=-10μA ;IC=0

-5

VCEsat

Collector-emitter saturation voltage

IC=-0.5A ;IB=-50mA

-0.4

VBEsat

Base-emitter saturation voltage

IC=-0.5A ;IB=-50mA

-1.2

ICBO

Collector cut-off current

VCB=-50V; IE=0

-1

μA

IEBO

Emitter cut-off current

VEB=-4V; IC=0

-1

μA

hFE-1

DC current gain

IC=-50mA ; VCE=-5V

320

hFE-2

DC current gain

IC=-0.5A ; VCE=-5V

Transition frequency

IC=-50mA ; VCE=-10V

110

MHz

COB

Collector output capacitance

f=1MHz ; VCB=-10V

Switching times

Fall time

0.08

μs

toff

Turn-off time

0.10

μs

tstg

Storage time

IC=-500mA ; VCE=-12V

IB1=-IB2=-50mA

0.60

μs

hFE-1 Classifications

60-120

100-200

160-320

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