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2SB633 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB633 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon PNP Power Transistors 2SB633 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; RBE=∞ -85 V V(BR)CBO Collector-base breakdown voltage IC=-5mA; IE=0 -100 V V(BR)EBO Emitter-base breakdown votage IE=-5mA; IC=0 -6 V VCEsat Collector-emitter saturation voltage IC=-4A;IB=-0.4 A -2.0 V VBE Base-emitter on voltage IC=-1A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-40V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-4V; IC=0 -0.1 mA hFE-1 DC current gain IC=-1A ; VCE=-5V 40 320 hFE-2 DC current gain IC=-3A ; VCE=-5V 20 fT Transition frequency IC=-1A ; VCE=-5V 15 MHz COB Output capacitance IE=0; VCB=-10V;f=1MHz 150 pF hFE-1 classifications C D E F 40-80 60-120 100-200 160-320 |
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