2SB696 datasheet(1/2 Pages) ISC

部件名	2SB696

功能描述	isc Silicon PNP Power Transistors

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistors

2SB696

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -120V(Min)

·High Current Capability

·Wide Area of Safe Operation

·Complement to Type 2SD732

APPLICATIONS

·Designed for AF power amplifier applications.

·Recommended for output stage of 60W power amplifier.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-150

V

VCEO

Collector-Emitter Voltage

-120

V

VEBO

Emitter-Base Voltage

-6

V

IC

Collector Current-Continuous

-8

A

ICM

Emitter Current-Peak

-12

A

PC

Collector Power Dissipation

@TC=25℃

80

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-40~150

℃

isc Website：www.iscsemi.cn

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制造商	部件名	数据表	功能描述
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Savantic, Inc.	2SB696	114Kb / 3P	Silicon PNP Power Transistors
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