2SB727 datasheet(2/2 Pages) ISC

部件名	2SB727

功能描述	isc Silicon PNP Darlington Power Transistor

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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2 / 2 page

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

2SB727

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= -25mA, RBE= ∞

-120

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= -50mA, IC= 0

-7

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= -3A, IB= -6mA

-1.5

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= -6A, IB= -60mA

-3.0

VBE(sat)-1

Base-Emitter Saturation Voltage

IC= -3A, IB= -6mA

-2.0

VBE(sat)-2

Base-Emitter Saturation Voltage

IC= -6A, IB= -60mA

-3.5

ICBO

Collector Cutoff Current

VCB= -120V, IE= 0

-100

μA

ICEO

Collector Cutoff Current

VCE= -100V; RBE= ∞

-10

μA

hFE

DC Current Gain

IC= -3A; VCE= -3V

1000

20000

Switching times

ton

Turn-On Time

1.0

μs

toff

Turn-Off

Time

IC= -3A; IB1= -IB2= -6mA

3.0

μs

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