2SB761 datasheet(2/3 Pages) ISC

部件名	2SB761

功能描述	Silicon PNP Power Transistors

PDF	3 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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2 / 3 page

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB761 2SB761A

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

2SB761

-60

VCEO

Collector-emitter

breakdown voltage

2SB761A

IC=-30mA; IB=0

-80

VCEsat

Collector-emitter saturation voltage

IC=-3 A;IB=-0.375 A

-1.2

VBE

Base-emitter on voltage

IC=-3A ; VCE=-4V

-1.8

2SB761

VCE=-60V; VBE=0

ICES

Collector

cut-off current

2SB761A

VCE=-80V; VBE=0

-200

μA

ICEO

Collector cut-off current

VCE=-60V; IB=0

-300

μA

IEBO

Emitter cut-off current

VEB=-5V; IC=0

-1

hFE-1

DC current gain

IC=-1A ; VCE=-4V

250

hFE-2

DC current gain

IC=-3A ; VCE=-4V

Switching times

ton

Turn-on time

0.5

μs

toff

Turn-off time

IC=-1A ; IB1=-IB2=-0.1 A

2.0

μs

hFE-1 classifications

40-90

70-150

120-250

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