2SB856 datasheet(1/2 Pages) ISC

部件名	2SB856

功能描述	isc Silicon PNP Power Transistor

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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1 / 2 page

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

2SB856

DESCRIPTION

·Collector Current: IC= -3A

·Low Collector Saturation Voltage

: VCE(sat)= -1.2V(Max)@IC= -2A

·High Collector Power Dissipation

APPLICATIONS

·Designed for low frequency power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-50

V

VCEO

Collector-Emitter Voltage

-50

V

VEBO

Emitter-Base Voltage

-4

V

IC

Collector Current-Continuous

-3

A

PC

Total Power Dissipation

@ TC=25℃

25

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-45~150

℃

isc Website：www.iscsemi.cn

类似零件编号 - 2SB856

制造商	部件名	数据表	功能描述
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Savantic, Inc.	2SB856	102Kb / 3P	Silicon PNP Power Transistors
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