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2SB885 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited

部件名 2SB885
功能描述  Silicon PNP Power Transistor
PDF  3 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

2SB885 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited

  2SB885 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SB885 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2SB885 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
Silicon PNP Power Transistor
2SB885
DESCRIPTION
・With TO-220C package
・DARLINGTON
・High DC durrent gain
・Low collector saturation voltage
・Complement to type 2SD1195
APPLICATIONS
・For motor drivers,printer hammer
drivers,relay drivers,voltage regulator
control applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-110
V
VCEO
Collector-emitter voltage
Open base
-100
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current-DC
-5
A
ICM
Collector current-Pulse
-8
A
TC=25℃
35
PC
Collector power dissipation
Ta=25℃
1.75
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃


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