Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

Features

■ High ruggedness

■ R

■ Gate Charge (Max 8nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics,

such as fast switching time, low on resistance, low gate charge and especially excellent

avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC

converter block and SMPS. It’s typical application is TV and monitor.

N-channel MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220

TO-220F

V

DSS

Drain to Source Voltage

600

V

I

D

Continuous Drain Current (@T

2.0

2.0*

A

Continuous Drain Current (@T

1.6

1.6*

A

I

DM

Drain current pulsed

(note 1)

8.0

A

V

GS

Gate to Source Voltage

± 30

V

E

AS

Single pulsed Avalanche Energy

(note 2)

157

mJ

E

AR

Repetitive Avalanche Energy

(note 1)

4.5

mJ

dv/dt

Peak diode Recovery dv/dt

(note 3)

5.0

V/ns

P

D

Total power dissipation (@T

64

28

W

0.5

0.21

T

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

T

L

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-220

TO-220F

R

thjc

Thermal resistance, Junction to case

1.95

4.5

R

thcs

Thermal resistance, Case to Sink

0.5

R

thja

Thermal resistance, Junction to ambient

62.5

Mar. 2011. Rev. 2.0

1/7

*. Drain current is limited by junction temperature.

BV

I

D

: 2.0A

R

1

2

3

1. Gate 2. Drain 3. Source

TO-220F

1

2

3

TO-220

SW2N60

SAMWIN

1

2

3

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW P 2N60

SW2N60

TO-220

TUBE

2

SW F 2N60

SW2N60

TO-220F

TUBE