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SW830A 数据表(PDF) 3 Page - Xian Semipower Electronic Technology Co., Ltd. |
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SW830A 数据表(HTML) 3 Page - Xian Semipower Electronic Technology Co., Ltd. |
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3 / 7 page ![]() Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Fig. 1. On-state characteristics Fig. 2. Transfer characteristics Fig. 3. On-resistance variation vs. drain current and gate voltage Fig. 5. Capacitance characteristics (Non-Repetitive) Fig. 6. Gate charge characteristics Fig. 4. On state current vs. diode forward voltage 10 0 10 1 10 -1 10 0 10 1 *. Notes : 1. 250¥ىs Pulse Test 2. T C = 25،ة V GS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V V DS , Drain-Source Voltage [V] 2 3 4 5 6 7 8 9 10 10 -1 10 0 10 1 150 oC 25 oC -55 oC *. Notes : 1. V DS = 30V 2. 250¥ىs Pulse Test V GS , Gate-Source Voltage [V] 0 2 4 6 8 10 12 14 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V GS = 20V V GS = 10V *. Note : T J = 25،ة I D , Drain Current [A] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 -1 10 0 10 1 150 oC *. Notes : 1. V GS = 0V 2. 250¥ىs Pulse Test 25 oC V SD , Source-Drain voltage [V] 0 5 10 15 20 25 30 35 40 0 250 500 750 1000 C iss =C gs +C gd (C ds =shorted) C oss =C ds +C gd C rss =C gd *. Notes : 1. V GS = 0V 2. f=1MHz C iss C oss C rss V DS , Drain-Source Voltage [V] 0 5 10 15 20 0 2 4 6 8 10 12 V DS = 100V V DS = 250V V DS = 400V *. Note : I D = 5.5 A Q G , Total Gate Charge [nC] SW830A SAMWIN 3/7 |
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