2SB1103 datasheet(2/3 Pages) ISC

部件名	2SB1103

功能描述	Silicon PNP Power Transistors

PDF	3 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB1103

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-emitter breakdown voltage

IC=-25mA, RBE=∞

-60

V(BR)EBO

Emitter-base breakdown voltage

IE=-50mA, IC=0

-7

VCEsat-1

Collector-emitter saturation voltage

IC=-4A ,IB=-8mA

-1.5

VCEsat-2

Collector-emitter saturation voltage

IC=-8A ,IB=-80mA

-3.0

VBEsat-1

Base-emitter saturation voltage

IC=-4A ,IB=-8mA

-2.0

VBEsat-2

Base-emitter saturation voltage

IC=-8A ,IB=-80mA

-3.5

ICBO

Collector cut-off current

VCB=-60V, IE=0

-100

μA

ICEO

Collector cut-off current

VCE=-50V, RBE=∞

-10

μA

hFE

DC current gain

IC=-4A ; VCE=-3V

1000

Diode forward voltage

ID=8A

3.0

Switching times

ton

Turn-on time

0.5

μs

tstg

Storage time

3.0

μs

Fall time

IC=-4A ,IB1=-IB2=-8mA

1.0

μs

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