Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

Features

■ High ruggedness

■ R

■ Gate Charge (Max 6nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics,

such as fast switching time, low on resistance, low gate charge and especially

excellent avalanche characteristics. This power MOSFET is usually used

at AC adaptors and SMPS.

N-channel D-PAK/I-PAK/TO-92 MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-92

TO-251

TO-252

V

DSS

Drain to Source Voltage

600

V

I

D

Continuous Drain Current (@T

0.8

1.0

A

Continuous Drain Current (@T

0.5

0.65

A

I

DM

Drain current pulsed

(note 1)

2.0

4.0

A

V

GS

Gate to Source Voltage

± 30

V

E

AS

Single pulsed Avalanche Energy

(note 2)

52

mJ

E

AR

Repetitive Avalanche Energy

(note 1)

0.3

mJ

dv/dt

Peak diode Recovery dv/dt

(note 3)

4.5

V/ns

P

D

Total power dissipation (@T

3

30

W

0.025

0.23

T

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

T

L

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

260

275

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-92

TO-251

TO-252

R

thjC

Thermal resistance, Junction to case

-

4.2

R

thCS

Thermal resistance, Junction to Lead Max

40

-

R

thjA

Thermal resistance, Junction to ambient

120

100

Mar. 2011. Rev. 2.0

1/7

BV

I

D

: 1.0A

R

1

2

3

SW1N60C

SAMWIN

1

2

3

1

2

3

1. Gate 2. Drain 3. Source

TO-251

1

2

3

TO-252

TO-92

Item

Sales Type

Marking

Package

Packaging

1

SW C 1N60C

SW1N60C

TO-92

TAPE

2

SW I 1N60C

SW1N60C

TO-251

TUBE

3

SW D 1N60C

SW1N60C

TO-252

REEL

Order Codes