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2SB1133 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB1133 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon PNP Power Transistors 2SB1133 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-5mA ;RBE=∞ -60 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 -60 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -6 V VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A -1.0 V VBE Base-emitter saturation voltage IC=-0.5A ; VCE=-5V -1.0 V ICBO Collector cut-off current VCB=-40V ;IE=0 -100 μA IEBO Emitter cut-off current VEB=-4V; IC=0 -100 μA hFE-1 DC current gain IC=-0.5A ; VCE=-5V 70 280 hFE-2 DC current gain IC=-3A ; VCE=-5V 20 COB Output capacitance IE=0 ; VCB=-10V; f=1MHz 110 pF fT Transition frequency IC=-0.5A ; VCE=-5V 40 MHz hFE-1 Classifications Q R S 70-140 100-200 140-280 |
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