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Features

■ High ruggedness

■ R

■ Gate Charge (Max 6nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics,

such as fast switching time, low on resistance, low gate charge and especially

excellent avalanche characteristics. This power MOSFET is usually used

at AC adaptors and SMPS.

N-channel MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

DSS

Drain to Source Voltage

700

V

I

D

Continuous Drain Current (@T

0.8

A

Continuous Drain Current (@T

0.4

A

I

DM

Drain current pulsed

(note 1)

2.4

A

V

GS

Gate to Source Voltage

± 30

V

E

AS

Single pulsed Avalanche Energy

(note 2)

52

mJ

E

AR

Repetitive Avalanche Energy

(note 1)

0.3

mJ

dv/dt

Peak diode Recovery dv/dt

(note 3)

4.5

V/ns

P

D

Total power dissipation (@T

3

W

0.023

T

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

T

L

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

R

thCS

Thermal resistance, Junction to Lead Max

40

R

thjA

Thermal resistance, Junction to ambient

120

Mar. 2011. Rev. 2.0

1/7

BV

I

D

: 0.8A

R

1

2

3

SW1N70C

SAMWIN

1. Gate 2. Drain 3. Source

1

2

3

TO-92

Item

Sales Type

Marking

Package

Packaging

1

SW C 1N70C

SW1N70C

TO-92

TAPE

Order Codes