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SWW20N60 数据表(PDF) 4 Page - Xian Semipower Electronic Technology Co., Ltd.

部件名 SWW20N60
功能描述  N-channel Power MOSFET
PDF  7 Pages
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制造商  SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]
网页  http://www.samwinsemi.com
标志 SEMIPOWER - Xian Semipower Electronic Technology Co., Ltd.

SWW20N60 数据表(HTML) 4 Page - Xian Semipower Electronic Technology Co., Ltd.

  SWW20N60 Datasheet HTML 1Page - Xian Semipower Electronic Technology Co., Ltd. SWW20N60 Datasheet HTML 2Page - Xian Semipower Electronic Technology Co., Ltd. SWW20N60 Datasheet HTML 3Page - Xian Semipower Electronic Technology Co., Ltd. SWW20N60 Datasheet HTML 4Page - Xian Semipower Electronic Technology Co., Ltd. SWW20N60 Datasheet HTML 5Page - Xian Semipower Electronic Technology Co., Ltd. SWW20N60 Datasheet HTML 6Page - Xian Semipower Electronic Technology Co., Ltd. SWW20N60 Datasheet HTML 7Page - Xian Semipower Electronic Technology Co., Ltd.  
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Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Fig. 9. Maximum drain current vs.
case temperature.
Fig. 8. On resistance variation
vs. junction temperature
Fig. 10. Maximum safe operating area
Fig. 11. Transient thermal response curve
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
*. Notes :
1. V
GS
= 0 V
2. I
D
= 250 uA
T
J
, Junction Temperature [
oC]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
*. Notes :
1. V
GS
= 10 V
2. I
D
= 5.0 A
T
J
, Junction Temperature [
oC]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
DC
10 ms
1 ms
100 s
Operation in This Area
is Limited by R
DS(on)
*. Notes :
1. T
C
= 25
oC
2. T
J
= 150
oC
3. Single Pulse
V
DS
, Drain-Source Voltage [V]
25
50
75
100
125
150
0
2
4
6
8
10
T
C'
Case Temperature [
oC]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
*. Notes :
1. Z
¥èJC
(t) = 0.85
oC/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
¥èJC
(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
t
1
, Square Wave Pulse Duration [sec]
t
1
t
2
SAMWIN
SW20N60
4/7



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