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Features

■ High ruggedness

■ R

■ Gate Charge (Typ 20nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

General Description

These N-channel enhancement mode power field effect transistors are produced using

SAMWIN’s proprietary, planar stripe, DMOS technology.

This advanced technology enable power MOSFET to have better characteristics, such as

fast switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics. These devices are widely used in AC-DC power suppliers, DC-DC

converters and H-bridge PWM motor drivers

N-channel MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

DSS

Drain to Source Voltage

60

V

I

D

Continuous Drain Current (@T

30

A

Continuous Drain Current (@T

14

A

I

DM

Drain current pulsed

(note 1)

120

A

V

GS

Gate to Source Voltage

± 20

V

E

AS

Single pulsed Avalanche Energy

(note 2)

178

mJ

E

AR

Repetitive Avalanche Energy

(note 1)

4.0

mJ

dv/dt

Peak diode Recovery dv/dt

(note 3)

7.0

V/ns

P

D

Total power dissipation (@T

44

W

0.57

T

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

T

L

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

Min.

Typ.

Max.

R

thjc

Thermal resistance, Junction to case

2.85

R

thcs

Thermal resistance, Case to Sink

50

R

thja

Thermal resistance, Junction to ambient

110

May. 2011. Rev. 3.0

1/7

BV

I

D

: 30A

R

1

2

3

1. Gate 2. Drain 3. Source

1

2

3

1

2

3

TO-251

TO-252

SW30N06

SAMWIN

Item

Sales Type

Marking

Package

Packaging

1

SW P 30N06

SW30N06

TO-220

TUBE

2

SW I 30N06

SW30N06

TO-251

TUBE

3

SW D 30N06

SW30N06

TO-252

REEL

Order Codes

TO-220

1

2

3